Deeply Subwavelength All-Dielectric Nanophotonics in Silicon
Inventors: Dr. Judson Ryckman
Keywords: Optoelectronics
Market Overview
This technology increases the energy output for optoelectronic applications by increasing the energy density in the longitudinal and transverse planes. This increasing of the efficacy of devices such as LIDAR, free-space communications, and optical manipulations. The global market for optoelectronics is growing at a CAGR of 18.3% from 2016 to 2023. The growth in this market is driven from the high demand for bandwidth and current power constraints. This invention would increase power output and bandwidth all while lowering the necessary power needed.
Applications:
All-dielectric silicon nanophotonic for increased energy density and lower power usage
Technical Summary:
This technology has two features that enhance the energy densities of optical wavelengths in both the longitudinal and transverse dimensions. The inventors introduce a new pathway for enhancing optical confinement in the longitudinal dimension of a waveguide using “Periodic Spatial Refocusing” (PSR). This unique approach can achieve extreme light confinement and ultra-high energy densities. The transverse dimension achieves higher density using a bridged V-groove waveguide which enhances the signal. When these two methods are combined it is possible to achieve 1000x energy scaling.
Advantages:
- All-dielectric design, allowing for significantly lower losses compared to plasmonic approaches
- Increased optical densities, which achieves improved performance with lower energy input
- First-time realization of optical devices achieving the optical confinement and enhanced light-matter interactions
Technology Overview
State of Development
Proof of concept prototype
Patent Type
Provisional
Category
Serial Number
62/844,815
CURF Reference No.
2019-022
Inventors
Dr. Judson Ryckman
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